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Electronic Properties of Doped Semiconductors (Springer Series in Solid-State Sciences)
Electronic Properties of Doped Semiconductors (Springer Series in Solid-State Sciences) Summary:By B. I. Shklovskii, A. L. Efros
states and conduction in doped semiconductors at low temperatures, that is, in the region where the properties of the electronic states differ most from those of Bloch waves. Depending on the doping, the electronic states of a semiconductor at zero temperature may be localized or delocalized. An important advance in the theory of disordered systems was the so-called Anderson theorem, which posits the existence of strictly localized states under certain conditions. A discussion of this question (Chap. 2) begins the exposition of the theory of electronic states, which differs from that for ideal crystals in that it must account for electron-electron interaction even at the lowest electron concentrations. To this end, a nonlinear screening theory was developed, based on the selfconsistent field method (Sect. 3.4). This method does not, however, work in the vicinity of the Fermi level, where the density of states has interesting and peculiar features (Chap. 10). If the Fermi level is in the localized-state region, then conduction is due to electron hopping and is exponentially dependent on temperature and the impurity concentration. The hopping conduction phenomenon was identified long ago, but several major advances have taken place in the last decade. A theory was developed which describes the temperature, concentration and magnetic field dependences quantitatively. This theory is based on a new mathematical discipline known as "percolation theory". Chapter 5 details the main tenets of percolation theory, replete with bibliography on the topic. Although the book is devoted to crystallic semiconductors, many of the ideas and methods also apply to amorphous semiconductors, so much so that "amorphous digressions" are an integral part of the text. Occasionally (see Chap. 9) experimental data on amorphous semiconductors are used to support certain concepts. The book is not intended solely as a specialists' monograph, but also as an extension of an ordinary course in semiconductor theory that touches on a new range of problems. Chapter 1 and Sects. 4.1 and 11.1 serve to connect this book with standard courses in the theory of "pure" semiconductors. The book is aimed at a wide readership: theoretical and experimental physicists, graduate students, and engineers acquainted with the basics of solid-state physics. It is useful to keep in mind that as a rule all questions are discussed twice, first qualitatively and then quantitatively. For the reader not interested in mathematical detail the qualitative explanation should suffice. The authors substantially updated the book for the English edition, adding new results in percolation theory and hopping conduction. During the five years since the Russian edition, several significant developments had occurred in the physics of disordered systems. One of these was the creation in 1979 of the scaling theory of localization by Anderson with coworkers and Thouless. This has been incorporated into Chapter 2 of the present edition. New ideas have also emerged in the understanding of electron-electron interaction in disordered systems. In 1975 the authors proposed the idea that a Coulomb gap may form in the vicinity of the Fermi level, which if correct would make it necessary to revise Mott's law for variable-range hopping conduction. In the Russian edition, only one section was devoted to this question, but since then, a number of authors have made both theoretical and experimental contributions to this subject. In the present edition, a whole new chapter is devoted to this question (Chapter 14). It describes computer modelling of the Coulomb gap, the impurity-band structure, and hopping conduction. password:baribal Please select one mirror to download
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NEWER EBOOKSOLDER EBOOKSSponsored LinksElectronic Properties of Doped Semiconductors (Springer Series in Solid-State Sciences) Keywordsconduction semiconductors states edition chapter electronic hopping percolation experimental chap devoted disordered authors fermi systems amorphous russian mathematical quantitatively vicinity electronic states doped semiconductors screening theory developed based nonlinear screening electron concentrations lowest electron peculiar features exponentially dependent conduction phenomenonBookmark Electronic Properties of Doped Semiconductors (Springer Series in Solid-State Sciences)Hyperlink code:
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